INTRINSIC Semiconductor Announces GaN-based HEMT Epitaxial Products
STERLING, Va.—(BUSINESS WIRE)—June 22, 2004—
INTRINSIC Semiconductor, a privately held manufacturer
of wide bandgap materials, today announced that it is offering
commercial sales of GaN-based HEMT epitaxial products on internally
manufactured SiC wafers for use in microelectronic device
applications. Initial product wafers are currently being sampled to
strategic customers.
INTRINSIC is offering state-of-the-art custom AlGaN/GaN HEMT
structures developed to meet exacting commercial and military customer
requirements. These GaN-based HEMT structures are available on
internally manufactured SiC wafers or customer-supplied SiC
substrates. GaN-based epitaxial products on sapphire and silicon
substrates are also available. For complete product specifications for
the GaN-based epitaxial services, please visit the corporate web site
at www.intrinsicsemi.com.
Dr. Cengiz Balkas, INTRINSIC President and CEO stated, "The
strategic offering of GaN-based epitaxy is an obvious extension to our
current SiC wafer products portfolio. We are pleased to offer
integrated GaN and SiC product solutions and believe our model will
afford higher quality materials through improved cycle times at
reduced costs to our customers. The engineering team at INTRINSIC has
done a fantastic job bringing high quality GaN epi capability in-house
in record time."
About INTRINSIC Semiconductor Corporation
INTRINSIC Semiconductor is a privately held emerging growth
company focusing on materials and device technologies based on SiC and
GaN; clear forerunners for next-generation high power and
high-frequency device applications. For additional information on
INTRINSIC, please visit www.intrinsicsemi.com.
For more information on INTRINSIC, contact:
contact@intrinsicsemi.com
For sales and product information or to request a quotation, contact:
sales@intrinsicsemi.com
703-437-4000
Contact:
INTRINSIC Semiconductor Corporation
Cengiz Balkas, 703-437-4000
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